Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer

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Bidders ID: NBD00159166874957886
Due Date: Oct 16, 2026
Posted Date: Oct 13, 2026
Level of Government: Federal
State: Ohio
Agency: NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Category:
  • 59 - Electrical and Electronic Equipment Components
Solicitation Number: 80NSSC27946811Q
Source: Members Only
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Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer
Active
Contract Opportunity
Notice ID
80NSSC27946811Q
Related Notice
Department/Ind. Agency
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
General Information
  • Contract Opportunity Type: Special Notice (Original)
  • Original Published Date: Oct 13, 2026 03:21 pm CDT
  • Original Response Date: Oct 16, 2026 04:00 pm CDT
  • Inactive Policy: 15 days after response date
  • Original Inactive Date: Oct 31, 2026
  • Initiative:
    • None
Classification
  • Original Set Aside:
  • Product Service Code: 5961 - SEMICONDUCTOR DEVICES AND ASSOCIATED HARDWARE
  • NAICS Code:
    • 334413 - Semiconductor and Related Device Manufacturing
  • Place of Performance:
    Cleveland , OH 44135
    USA
Description

NASA/NSSC has a requirement for Dopant Selective Deep Reactive Ion Etching of 4H-SiC Wafer. See attached SOW for full details of the requirement.



VENDORS MUST REFERENCE THE NOTICE ID WHEN SUBMITTING A CAPABILITY STATEMENT.



NOTE: Quotes received in response to this notice will NOT be considered and will not be evaluated by

NASA’s Technical End User Team. We are currently only requesting Capability Statements.


Attachments/Links
Contact Information
Contracting Office Address
  • US
Primary Point of Contact
Secondary Point of Contact
History
  • Oct 13, 2026 03:21 pm CDTSpecial Notice (Original)
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